Toshiba field effect transistor silicon n channel mos type. Alibaba manufacturer directory suppliers, manufacturers. They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. Bc179 low noise general purpose audio amplifiers description the bc177, bc178 and bc179 are silicon planar epitaxial pnp transistors in to18 metal case. Free packages are available maximum ratings rating symbol value unit collector. Mitsubishi rf power mos fet rd70hhf1 silicon mosfet power transistor 30mhz,70w rd70hhf1 mitsubishi electric rev. Stp80n70f6 68 v 96 a 110 w vgs 10 v 3 rdson qg industry benchmark 2 1 extremely low onresistance rdson to220 high avalanche ruggedness low gate drive. Turnon, turnoff, and storage delay the bipolar transistor exhibits a few delay characteristics when turning on and off. Npn power transistor datasheet, npn power transistor pdf, npn power transistor data sheet, datasheet, data sheet, pdf. If you are satisfy with us,pleae leave five star positive feeback,and welcome to our store again,we will supply the good items and service all the time.
Base voltage mps2222 mps2222a vcbo 60 75 vdc emitter. We try our best to provide you high quality and good service. C absolute maximum rating ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 30 v collectoremitter voltage vceo 15 v emitterbase voltage vebo 5 v collector current ic 50. The device is therefore suitable in advanced highefficiency switching applications. You have clicked a page that seems to be very popular. Fdn8601 on semiconductor datasheet and cad model download. Emitter voltage mps2222 mps2222a vceo 30 40 vdc collector. Fmr11n90e fuji power mosfet super fape3 series nchannel silicon power mosfet features outline drawings mm equivalent circuit schematic maintains both low power loss and low noise to3pf lower r on characteristic ds more controllable switching dvdt by gate resistance draind smaller v. The 80nf70 is a nchannel power mosfet realized with stmicroelectronics unique stripfet process. Kf5n50 datasheet pdf, kf5n50 pdf datasheet, equivalent, schematic, kf5n50 datasheets, kf5n50 wiki, transistor, cross reference, pdf download,free search site, pinout. Dl110 rev12 wireless rf, if and transmitter device. It has specifically been designed to minimize input capacitance and gate charge. The company launched an ambitious effort to digitize thousands of obsolete data books and technical manuals, making them searchable via their datasheet archive website.
Compare pricing for on semiconductor 80sq045nrlg across 27 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Discrete rd70hhf1 rohs compliance, silicon mosfet power transistor 30mhz,70w description rd70hhf1 is a mos fet type transistor specifically designed for hf high power amplifiers applications. For example, bc548 is a general purpose amplifier and switch but i cannot find the storage time in the datasheet. G80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. Gum is the maximum unilateral power gain, assuming s12 is zero and 2.
September 1995 4 philips semiconductors product speci. The website currently stores information datasheets, and cross references on over 100 million. The datasheet archive is a large free resource for electronic component datasheets and scanned data books. Semiconductor components industries, llc, 2007 april, 2007 rev. Dl110d rev10 wireless semiconductor solutions rf and if device data 1722p. Free package is available maximum ratings rating symbol value unit collector. Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf home all manufacturers by category part name, description or manufacturer contain.
Is there any way to estimate the storage time of such devices. General purpose transistors npn silicon features pb. Datasheet archive here youll find detailed product descriptions and quickclick access to product datasheets. Ii power mosfet, stp80nf70 datasheet, stp80nf70 circuit, stp80nf70 data sheet. The stp80nf70 is a nchannel power mosfet realized with stmicroelectronics unique stripfet process. Use the easy search guide below to go through categories like computer systems, electromechanical components, and optoelectronics, and fine tune your search by selecting from various end markets like consumer appliances, lighting. Complementary silicon power darlington transistor st microelectronics 6. Dl110d rev9 wireless semiconductor solutions device data vol. Mpsa70 amplifier transistor pnp silicon features pb. G80n60 datasheet vces 660v, ultrafast igbt fairchild. Most transistors, and especially power transistors, exhibit long basestorage times that limit maximum frequency of operation in switching applications. By the way, considering the switching characteristics of 2n3906. Toshiba small signal transistor semiconductor data book. Plastic package has underwriters laboratory flammability classifications 94v0 metal to silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection.
Dl110d rev11wireless semiconductor solutions rf and if device data 1726p. The 80nf70, stp80nf70 is a nchannel power mosfet realized with stmicroelectronics unique stripfet process. Hi, while some transistors such as 2n3906 explicitly mention the storage time 225 ns in this case, some others do not. Bc179 datasheet low noise general purpose audio amplifiers.
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